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BC847B, BC847C
General Purpose SMD NPN Transistors
Page 1 31/05/05 V1.0
SOT-23 Features:
Silicon planar epitaxial transistors.
General purpose NPN transistors.
Package Outline Details
Pin Configuration
1. Base
2. Emitter
3. Collector
Absolute Maximum Ratings
Symbol BC847B BC847C Units
Collector-emitter voltage (V BE = 0) V CES
Maximum
50
V
Collector-emitter voltage (open base) VCEO 45
Collector current (peak value) ICM 200 mA
Total power dissipation up to T amb = 25°C Ptot 250 mW
Junction temperature Tj 150 °C
BC847B, BC847C
General Purpose SMD NPN Transistors
Page 2 31/05/05 V1.0
Absolute Maximum Ratings
Ratings (at TA = 25°C unless otherwise specified)
Symbol BC847B BC847C Units
Small-signal current gain
IC = 2mA; VCE = 5V; f = 1kHz h fe Minimum 125 -
Transition frequency at f = 100MHz
IC = 10mA; VCE = 5V fT Minimum >100 MHz
Noise figure at R S = 2kW
IC = 200mA; VCE = 5V
f = 1kHz; B = 200Hz
F Typical 2 dB
Symbol BC847B BC847C Units
Collector-base voltage (open emitter) VCBO
Maximum
50
V
Collector-emitter voltage (V BE = 0) VCES
Collector-emitter voltage (open base) VCEO 45
Emitter-base voltage (open collector) VEBO 6
Collector current (dc) IC 100
mA
Collector current (peak value) ICM
200Emitter current (peak value) -IEM
Base current (peak value) IBM
Total power dissipation upto T amb : 25°C Ptot 250 mW
Storage temperature Tstg - -55 to +150 °C
Junction temperature Tj Maximum 150
Thermal Resistance
From junction to ambient R th(j-a) = 500 K/W
Characteristics (T j = 25°C unless otherwise specified)
Collector cut off current
IE = 0; VCB = 30V
IE = 0; VCB = 30V; Tj = 150°C
ICBO < 15
5
nA
µA
Base-emitter voltage
IC = 2mA; VCE = 5V
IC = 10mA; VCE = 5V
VBE
VBE
Typical
<
660
580 to 700
770
mV
Saturation voltage
IC = 10mA; IB = 0.5mA
IC = 100mA; IB = 5mA
VCE(sat)
VBE(sat)
VCE(sat)
VBE(sat)
Typical
<
Typical
Typical
<
Typical
90
250
700
200
600
900
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